? 2010 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 250 v v dgr t j = 25 c to 150 c, r gs = 1m 250 v v gsm transient 30 v i d25 t c = 25 c50a i dm t c = 25 c, pulse width limited by t jm 130 a i a t c = 25 c 5 a e as t c = 25 c 1.5 j p d t c = 25 c 400 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062in.) from case for 10s 300 c plastic body for 10 s 260 c m d mounting torque (to-220, to-3p &to-247) 1.13 / 10 nmlb.in. f c mounting force (to-263) 10..65 / 2.2..14.6 n/lb. weight to-263 2.5 g to-220 3.0 g to-3p 5.5 g to-247 6.0 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ . max. bv dss v gs = 0v, i d = 1ma 250 v v gs(th) v ds = v gs , i d = 1ma 3.0 5.0 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 1 a t j = 125 c 150 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 60 m trench gate power mosfet n-channel enhancement mode features z avalanche rated z high current handling capability z fast intrinsic rectifier z low r ds(on) advantages z high power density z easy to mount z space savings applications z dc-dc coverters z battery chargers z switch-mode and resonant-mode power supplies z dc choppers z ac and dc motor drives z uninterrupted power supplies z high speed power switching applications v dss = 250v i d25 = 50a r ds(on) 60m ds99346b(01/10) ixta50n25t IXTQ50N25T ixtp50n25t ixth50n25t g d s to-220ab (ixtp) d (tab) to-263 aa (ixta) g s d (tab) g = gate d = drain s = source tab = drain to-3p (ixtq) g d s d (tab) to-247 (ixth) g d s d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixta50n25t IXTQ50N25T ixtp50n25t ixth50n25t symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ . max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 35 58 s c iss 4000 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 410 pf c rss 60 pf t d(on) 14 ns t r 25 ns t d(off) 47 ns t f 25 ns q g(on) 78 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 19 nc q gd 22 nc r thjc 0.31 c/w r thch (to-220) 0.50 c/w (to-3p & to-247) 0.25 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ . max. i s v gs = 0v 50 a i sm repetitive, pulse width limited by t jm 200 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 166 ns i rm 23 a q rm 1.9 c note: 1. pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 resistive switching times v gs = 15v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 3.3 (external) i f = 25a, -di/dt = 250a/ s v r = 100v, v gs = 0v
? 2010 ixys corporation, all rights reserved to-263 (ixta) outline e ? p to-247 (ixth) outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-3p (ixtq) outline pins: 1 - gate 2 - drain 3 - source to-220 (ixtp) outline ixta50n25t IXTQ50N25T ixtp50n25t ixth50n25t terminals: 1 - gate 2 - drain 3 - source terminals: 1 - gate 2 - drain 3 - source
ixys reserves the right to change limits, test conditions, and dimensions. ixta50n25t IXTQ50N25T ixtp50n25t ixth50n25t fig. 1. output characteristics @ t j = 25oc 0 5 10 15 20 25 30 35 40 45 50 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 0 4 8 1216202428 v ds - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 3. output characteristics @ t j = 125oc 0 5 10 15 20 25 30 35 40 45 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v ds - volts i d - amperes v gs = 10v 7v 5v 6v fig. 4. r ds(on) normalized to i d = 25a value vs. junction temperature 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 50a i d = 25a fig. 5. r ds(on) normalized to i d = 25a value vs. drain current 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 20 40 60 80 100 120 140 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 5 10 15 20 25 30 35 40 45 50 55 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
? 2010 ixys corporation, all rights reserved ixta50n25t IXTQ50N25T ixtp50n25t ixth50n25t fig. 7. input admittance 0 10 20 30 40 50 60 70 80 90 100 3.6 4.0 4.4 4.8 5.2 5.6 6.0 6.4 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 0 102030405060708090100 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 140 160 180 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 1020304050607080 q g - nanocoulombs v gs - volts v ds = 125v i d = 25a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
ixys reserves the right to change limits, test conditions, and dimensions. ixta50n25t IXTQ50N25T ixtp50n25t ixth50n25t ixys ref: t_50n25t(5g)01-26-10-a fig. 14. resistive turn-on rise time vs. drain current 20 21 22 23 24 25 26 15 20 25 30 35 40 45 50 i d - amperes t r - nanoseconds r g = 3.3 ? , v gs = 15v v ds = 125v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 14 18 22 26 30 34 38 2468101214161820 r g - ohms t r - nanoseconds 13 15 17 19 21 23 25 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 15v v ds = 125v i d = 25a, 50a fig. 16. resistive turn-off switching times vs. junction temperature 18 19 20 21 22 23 24 25 26 27 28 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 42 44 46 48 50 52 54 56 58 60 62 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 3.3 ? , v gs = 15v v ds = 125v i d = 25a i d = 50a fig. 17. resistive turn-off switching times vs. drain current 16 18 20 22 24 26 28 30 15 20 25 30 35 40 45 50 i d - amperes t f - nanoseconds 38 42 46 50 54 58 62 66 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 3.3 ? , v gs = 15v v ds = 125v t j = 125oc t j = 25oc t j = 25oc t j = 125oc fig. 13. resistive turn-on rise time vs. junction temperature 19 20 21 22 23 24 25 26 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 3.3 ? , v gs = 15v v ds = 125v i d = 50a i d = 25a fig. 18. resistive turn-off switching times vs. gate resistance 10 20 30 40 50 60 70 80 90 100 2 4 6 8 101214161820 r g - ohms t f - nanoseconds 40 60 80 100 120 140 160 180 200 220 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 15v v ds = 125v i d = 25a, 50a
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